A new test structure intended as a pixel for segmented X- and y-ray detectors has been deisgned, fabricated and tested. The structure consists of a PIN diode of 0.8 mm2 area and an n- channel JFET integrated on the same high resistivity (6kOhm cm) silicon chip. The electrical parameters like the leakage current, the transconductance and the capacitance have the good expected values. Instead, noise in excess is present in the transistor. Operated at room pemperature as an X-ray detector with the integrated front-end transistor in the charge configuration, the new test structure shows an Equivalent Noise Charge of about 60 electrons at the optimun shaping time of 3-6microsec.
PIN Diode and Integrated JFET on High Rsistivity Silicon: a New Test Structure
Dalla Betta, Gian Franco;Boscardin, Maurizio;Gregori, Paolo;Zorzi, Nicola
2001-01-01
Abstract
A new test structure intended as a pixel for segmented X- and y-ray detectors has been deisgned, fabricated and tested. The structure consists of a PIN diode of 0.8 mm2 area and an n- channel JFET integrated on the same high resistivity (6kOhm cm) silicon chip. The electrical parameters like the leakage current, the transconductance and the capacitance have the good expected values. Instead, noise in excess is present in the transistor. Operated at room pemperature as an X-ray detector with the integrated front-end transistor in the charge configuration, the new test structure shows an Equivalent Noise Charge of about 60 electrons at the optimun shaping time of 3-6microsec.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
