CV analysis of positive charging of 9 nm thick silicon dioxide after Fowler-Nordheim injection has been carried out. Measurements allow to distinguish between the two forms of positive charge depending on their response to gate voltage variation, i.e. TP (Trapped Holes) and APC (Anomalous Positive Charge). The different location of these traps in the oxide can address new insights on their origin.

The Effect of Stress Polarity on Positive Charging in Thin Gate Oxides

Bellutti, Pierluigi;Zorzi, Nicola
1999

Abstract

CV analysis of positive charging of 9 nm thick silicon dioxide after Fowler-Nordheim injection has been carried out. Measurements allow to distinguish between the two forms of positive charge depending on their response to gate voltage variation, i.e. TP (Trapped Holes) and APC (Anomalous Positive Charge). The different location of these traps in the oxide can address new insights on their origin.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/1809
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