Charging effects in dielectrics are currently considered as the major limiting factor for the reliability of RF MEMS switches. In this paper, an ohmic series switch and a shunt capacitive one are studied for modeling the charging contributions due to the actuation pads used for the electrostatic actuation of the device. For simulation purposes, a lumped circuit based on equivalent capacitances can be defined.
Charging Effects and related Equivalent Circuits for Ohmic Series and Shunt CapacitiveRF MEMS switches
Margesin, Benno;Giacomozzi, Flavio;
2008-01-01
Abstract
Charging effects in dielectrics are currently considered as the major limiting factor for the reliability of RF MEMS switches. In this paper, an ohmic series switch and a shunt capacitive one are studied for modeling the charging contributions due to the actuation pads used for the electrostatic actuation of the device. For simulation purposes, a lumped circuit based on equivalent capacitances can be defined.File in questo prodotto:
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