Charging effects in dielectrics are currently considered as the major limiting factor for the reliability of RF MEMS switches. In this paper, an ohmic series switch and a shunt capacitive one are studied for modeling the charging contributions due to the actuation pads used for the electrostatic actuation of the device. For simulation purposes, a lumped circuit based on equivalent capacitances can be defined.

Charging Effects and related Equivalent Circuits for Ohmic Series and Shunt CapacitiveRF MEMS switches

Margesin, Benno;Giacomozzi, Flavio;
2008

Abstract

Charging effects in dielectrics are currently considered as the major limiting factor for the reliability of RF MEMS switches. In this paper, an ohmic series switch and a shunt capacitive one are studied for modeling the charging contributions due to the actuation pads used for the electrostatic actuation of the device. For simulation purposes, a lumped circuit based on equivalent capacitances can be defined.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/17950
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