We report on an R&D activity aimed at the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics experiments and medical/industrial imaging applications. A dedicated fabrication technology has been developed at IRST (Trento, Italy), which allows for the production of single-sided microstrip detectors, with integrated coupling capacitors and polysilicon resistors, as well as active devices, including N-channel JFET`s, and N- or P-channel MOSFET`s. The peculiar characteristics of the fabrication process are outlined, and experimental results from the electrical characterisation of the devices are reported, showing that transistors with good elecgtric figures can be obtained within the proposed technology while preserving the basic detector parameters.

Development of a fabrication technology for silicon microstrip detectors with integrated electronics

Dalla Betta, Gian Franco;Boscardin, Maurizio;Gregori, Paolo;Zorzi, Nicola;Soncini, Giovanni;Ratti, Lodovico;
2001

Abstract

We report on an R&D activity aimed at the realisation of silicon microstrip detectors with integrated front-end electronics, to be used in high-energy physics experiments and medical/industrial imaging applications. A dedicated fabrication technology has been developed at IRST (Trento, Italy), which allows for the production of single-sided microstrip detectors, with integrated coupling capacitors and polysilicon resistors, as well as active devices, including N-channel JFET`s, and N- or P-channel MOSFET`s. The peculiar characteristics of the fabrication process are outlined, and experimental results from the electrical characterisation of the devices are reported, showing that transistors with good elecgtric figures can be obtained within the proposed technology while preserving the basic detector parameters.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/179
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