Surface Photo Voltage technique has been used to control the minority carrier diffusion lenght changes induced by an annealing at 1150 °C with respect to starting [Oi], annealing time and gas ambient. Oxygen precipitation significantly occurs if [Oi] is higher than a threshold value and it is coupled with both a diffusion lenght reduction and a weak dependence on annealing ambient. Indication of both an oxygen precipitate coalescence process during the annealing and a possible link between oxygen precipitate size and its efficiency as minority carrier recombination centres are observed

Minority Carrier Diffusion Length Changes in Si Substrate due to a High Temperature Annealing

Bellutti, Pierluigi;
1998

Abstract

Surface Photo Voltage technique has been used to control the minority carrier diffusion lenght changes induced by an annealing at 1150 °C with respect to starting [Oi], annealing time and gas ambient. Oxygen precipitation significantly occurs if [Oi] is higher than a threshold value and it is coupled with both a diffusion lenght reduction and a weak dependence on annealing ambient. Indication of both an oxygen precipitate coalescence process during the annealing and a possible link between oxygen precipitate size and its efficiency as minority carrier recombination centres are observed
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/1683
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