We report on some recent results from our research activity on silicon microstrip detectors. In particular, a test-chip aimed at the optimization of the dielectric film of coupling capacitors for AC-coupled microstrip detectors was fabricated and electrically characterized. Breakdown behaviour of coupling capacitors employing different dielectrics is presented and discussed. The impact of the different technological options adopted on some important parameters characterizing the detector performance, such as diode leakage current and breakdown voltage, is also analysed.

Analysis of the Breakdown Behaviour of Stacked Dielectric Capacitors for AC-coupled Silicon Microstrip Detectors

Boscardin, Maurizio;Dalla Betta, Gian Franco;Ferrario, Lorenza;Zen, Mario
1997

Abstract

We report on some recent results from our research activity on silicon microstrip detectors. In particular, a test-chip aimed at the optimization of the dielectric film of coupling capacitors for AC-coupled microstrip detectors was fabricated and electrically characterized. Breakdown behaviour of coupling capacitors employing different dielectrics is presented and discussed. The impact of the different technological options adopted on some important parameters characterizing the detector performance, such as diode leakage current and breakdown voltage, is also analysed.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/1428
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