A search was made for permanent damage near the cathode and anode in high-voltage stressed oxides of thickness from 5 nm to 80 nm. The stress-induced leakage currents were used to measure the damage. No evidence for increased trap densities near the anode was obtained, indicating that while impact ionization causes electron-hole pair generation, it does not generate permanent traps. Confirming experiments using gamma-radiation were performed
Cathode and Anode Traps in High-Voltage Stressed Silicon Oxides
Bellutti, Pierluigi
1996-01-01
Abstract
A search was made for permanent damage near the cathode and anode in high-voltage stressed oxides of thickness from 5 nm to 80 nm. The stress-induced leakage currents were used to measure the damage. No evidence for increased trap densities near the anode was obtained, indicating that while impact ionization causes electron-hole pair generation, it does not generate permanent traps. Confirming experiments using gamma-radiation were performedFile in questo prodotto:
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