Gate oxide quality at the active border region is known to be quite poor. By adopting a high temperature (1150 °C) dry field oxidation for LOCOS, the gate oxide quality in this border region can be improved to a quality level that is, in terms of charge to breakdown, very close to the characteristics typical for the bulk active region. In this way reliability and yield reduction related to gate oxide failure at the active region border is avoided. A qualitative model is used to support the hypothesis
Improvement of Gate Oxide Quality at the Active Region Border
Bellutti, Pierluigi
1996-01-01
Abstract
Gate oxide quality at the active border region is known to be quite poor. By adopting a high temperature (1150 °C) dry field oxidation for LOCOS, the gate oxide quality in this border region can be improved to a quality level that is, in terms of charge to breakdown, very close to the characteristics typical for the bulk active region. In this way reliability and yield reduction related to gate oxide failure at the active region border is avoided. A qualitative model is used to support the hypothesisFile in questo prodotto:
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