We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog, and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances.

PSP-based compact FinFET model describing dc and RF measurements

Serra, Nicola;
2006-01-01

Abstract

We present a new, PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body, which is suitable for digital, analog, and RF circuit simulation. The model is surface potential based and is demonstrated to accurately describe both TCAD data and measured FinFET currents, conductances, and capacitances.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/12668
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