In the recent years reliable technologies for the production of ion-sensitive integrated device compatible with conventional MOS technologies, have been developed. In this work, a numerical methodologies suitable for device-level analysis of Light-Addressable Potentiometric Sensors (LAPS) is presented. The formulation of charge transport equations adopted in the present model accounts for the charge layers at the electrolyte-insulator interface and for AC-modulated optical generation rate, thus providing a self-consistent picture of charge and field distribution within the device. Comparisons with actual LAPS responses provide validation of the TCAD tool
Light-Adressable Potentiometric Sensors - Models and Experiments
Lui, Alberto;
1996-01-01
Abstract
In the recent years reliable technologies for the production of ion-sensitive integrated device compatible with conventional MOS technologies, have been developed. In this work, a numerical methodologies suitable for device-level analysis of Light-Addressable Potentiometric Sensors (LAPS) is presented. The formulation of charge transport equations adopted in the present model accounts for the charge layers at the electrolyte-insulator interface and for AC-modulated optical generation rate, thus providing a self-consistent picture of charge and field distribution within the device. Comparisons with actual LAPS responses provide validation of the TCAD toolI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
