Numerical Simulation of H+-Sensitive FeT's: Physical Models and Experimental Validation

The physics-chemical models describing the ion charge build-up at the electrolyte-insulator interface of Electrolyte-Insulator-Semiconductor systems have been incorporated into the 2D semiconductor-device simulator HFIELDS. The code equipped with this new capability allows for a detailed, device-level analysis of H+-sensitive-field-effect transistors. The main features of Si3N4-gate ISFET’s fabricated at IRST with a CMOS-compatible technology are described. Comparison of simulations results with experimental responses of such devices provides validation of the implemented models