A fully implanted triple poly-Si double metal CCD/CMOS-VLSI fabrication process that combines buried n-channel Charge Coupled Devices with conventional poly-Si gate CMOS transistors has been developed at IRST-Microsensors and System Division. This technology mainly aimed at the development of full custom smart optical sensors for automatic vision and industrial automation, is to be considered also of potential interest for the development of analogue or mixed neural IC protoypes. By a suitable selection of masks subsets, pure CCD or CMOS technologies are made available to the designer. In this work an overview of the baseline IRST- CCD/CMOS technology is presented, and examples of recently developed CCD, CMOS, and CCD/CMOS integrated optical sensors are described
Integrated Optical Sensors in CCD/CMOS Technology
Bellutti, Pierluigi;Gottardi, Massimo;Dalla Betta, Gian Franco;Soncini, Giovanni
1996-01-01
Abstract
A fully implanted triple poly-Si double metal CCD/CMOS-VLSI fabrication process that combines buried n-channel Charge Coupled Devices with conventional poly-Si gate CMOS transistors has been developed at IRST-Microsensors and System Division. This technology mainly aimed at the development of full custom smart optical sensors for automatic vision and industrial automation, is to be considered also of potential interest for the development of analogue or mixed neural IC protoypes. By a suitable selection of masks subsets, pure CCD or CMOS technologies are made available to the designer. In this work an overview of the baseline IRST- CCD/CMOS technology is presented, and examples of recently developed CCD, CMOS, and CCD/CMOS integrated optical sensors are describedI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
