Ohmic RF-switches based on MEMS technology have been realized and characterized. In particular the mechanical structure for the realization of the ohmic contacts has been studied. Five design variations have been considered to clarify the role of the number of the contact points in the optimization of the performance of the devices. The fabrication process is presented and discussed in detail. The best design of a single switche has losses in the order of 0.4 dB at 15 GHz. An isolation better than -20 dB has been obtained up to 15 GHz. In addition the influence of the bias lines on the losses is presented.

Electromechanical aspects in the optimization of the trasmission characteristics of series ohmic RF-switches

Giacomozzi, Flavio;Margesin, Benno;Mulloni, Viviana
2004

Abstract

Ohmic RF-switches based on MEMS technology have been realized and characterized. In particular the mechanical structure for the realization of the ohmic contacts has been studied. Five design variations have been considered to clarify the role of the number of the contact points in the optimization of the performance of the devices. The fabrication process is presented and discussed in detail. The best design of a single switche has losses in the order of 0.4 dB at 15 GHz. An isolation better than -20 dB has been obtained up to 15 GHz. In addition the influence of the bias lines on the losses is presented.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/12028
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