An improvement of the gate oxide reliability has been obtained using an innovative isolation scheme (DW-LOCOS) in the CMOS sequence fabrication. In particular, the experimental results for the DW-LOCOS samples show that the charge to breackdown of gate oxide is from 5 to 10 times higher than for the conventional CMOS samples. In addition for the DW-LOCOS samples a remarkable weaker dependence of QBD on the stress current polarity has been measured. A possible explanation of this beaviour can be addressed to the quality improvement of the gate oxide layer facing the silicon surface.
On the improving of the gate oxide reliability
Bellutti, Pierluigi;Boscardin, Maurizio;Zen, Mario;Zorzi, Nicola
1996-01-01
Abstract
An improvement of the gate oxide reliability has been obtained using an innovative isolation scheme (DW-LOCOS) in the CMOS sequence fabrication. In particular, the experimental results for the DW-LOCOS samples show that the charge to breackdown of gate oxide is from 5 to 10 times higher than for the conventional CMOS samples. In addition for the DW-LOCOS samples a remarkable weaker dependence of QBD on the stress current polarity has been measured. A possible explanation of this beaviour can be addressed to the quality improvement of the gate oxide layer facing the silicon surface.File in questo prodotto:
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