A test device to implement room temperature visible resonant cavity light emitting diodes based on porous silicon planar microcavities is reported. The device is based on a post processing anodization of n+ stripes implented into p-doped Si wafers
A Test Chip for the Development of Porous Silicon Light Emitting Diodes
Bellutti, Pierluigi;Soncini, Giovanni;
1996-01-01
Abstract
A test device to implement room temperature visible resonant cavity light emitting diodes based on porous silicon planar microcavities is reported. The device is based on a post processing anodization of n+ stripes implented into p-doped Si wafersFile in questo prodotto:
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