PIN radiation detectors and other test-structures have been fabricated on a FZ, high-resistivity (2KW cm), n-type silicon substrate by a planar process that features three different alternative extrinsic-gettering techniques. Results from the electrical and optical characterization of such devices are reported and discussed. X-ray detection testing is under way

A Test Chip for the Development of Pin-Type Silicon Radiation Detectors

Dalla Betta, Gian Franco;Boscardin, Maurizio;Soncini, Giovanni
1996-01-01

Abstract

PIN radiation detectors and other test-structures have been fabricated on a FZ, high-resistivity (2KW cm), n-type silicon substrate by a planar process that features three different alternative extrinsic-gettering techniques. Results from the electrical and optical characterization of such devices are reported and discussed. X-ray detection testing is under way
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1156
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