The presence of an asymmetrical oxide-charge distribution in p-MOSFET`s irradiated under nonzero drain-to-source bias is pointed out by measuring the forward and reverse Id(Vgs) subthreshold characteristics. Numerical device simulation allow a better understanding of device operation to be achieved and provide an explanation for some aspects of the Id(Vgs) characteristics which can not be given on the basis of the experimental results only.
Asymmetrical Oxide-Charge Build-up in Irradiated p-MOSFETs
Dalla Betta, Gian Franco;Zen, Mario;Soncini, Giovanni
1995
Abstract
The presence of an asymmetrical oxide-charge distribution in p-MOSFET`s irradiated under nonzero drain-to-source bias is pointed out by measuring the forward and reverse Id(Vgs) subthreshold characteristics. Numerical device simulation allow a better understanding of device operation to be achieved and provide an explanation for some aspects of the Id(Vgs) characteristics which can not be given on the basis of the experimental results only.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
