The presence of an asymmetrical oxide-charge distribution in p-MOSFET`s irradiated under nonzero drain-to-source bias is pointed out by measuring the forward and reverse Id(Vgs) subthreshold characteristics. Numerical device simulation allow a better understanding of device operation to be achieved and provide an explanation for some aspects of the Id(Vgs) characteristics which can not be given on the basis of the experimental results only.

Asymmetrical Oxide-Charge Build-up in Irradiated p-MOSFETs

Dalla Betta, Gian Franco;Zen, Mario;Soncini, Giovanni
1995

Abstract

The presence of an asymmetrical oxide-charge distribution in p-MOSFET`s irradiated under nonzero drain-to-source bias is pointed out by measuring the forward and reverse Id(Vgs) subthreshold characteristics. Numerical device simulation allow a better understanding of device operation to be achieved and provide an explanation for some aspects of the Id(Vgs) characteristics which can not be given on the basis of the experimental results only.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1138
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