We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted high-resistivity (5kW cm), n-type silicon substrate, which is intended to be utilized as active device in the on-chip preamplifier of the silicon radiation detectors we are developing. Two-dimensional process and device simulations are employed to optimize the device doping profile, as well as to point out some important advantages of the proposed structure over possible alternative device designs

N-Channel JFET for On-Chip Read-Out Electronics of Radiation Detectors

Dalla Betta, Gian Franco;Boscardin, Maurizio;
1995

Abstract

We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted high-resistivity (5kW cm), n-type silicon substrate, which is intended to be utilized as active device in the on-chip preamplifier of the silicon radiation detectors we are developing. Two-dimensional process and device simulations are employed to optimize the device doping profile, as well as to point out some important advantages of the proposed structure over possible alternative device designs
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/1137
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