We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted high-resistivity (5kW cm), n-type silicon substrate, which is intended to be utilized as active device in the on-chip preamplifier of the silicon radiation detectors we are developing. Two-dimensional process and device simulations are employed to optimize the device doping profile, as well as to point out some important advantages of the proposed structure over possible alternative device designs
N-Channel JFET for On-Chip Read-Out Electronics of Radiation Detectors
Dalla Betta, Gian Franco;Boscardin, Maurizio;
1995-01-01
Abstract
We report on the design of an n-channel Junction Field Effect Transistor (JFET) on fully-depleted high-resistivity (5kW cm), n-type silicon substrate, which is intended to be utilized as active device in the on-chip preamplifier of the silicon radiation detectors we are developing. Two-dimensional process and device simulations are employed to optimize the device doping profile, as well as to point out some important advantages of the proposed structure over possible alternative device designsFile in questo prodotto:
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