The development of a TiN diffusion barrier for a double metal technology based on the use of Low Temperature Oxide (LTO) as intermetal dielectric is described. Processing problems are reviewed and discussed. This technology is to be used for the scale down of the Irst CCD7CMOS process
TiN Diffusion Barrier and Ti cap for Double Metal I.C. Interconnects
Giacomozzi, Flavio;Pedrotti, Severino;Moscon, Franco
1995-01-01
Abstract
The development of a TiN diffusion barrier for a double metal technology based on the use of Low Temperature Oxide (LTO) as intermetal dielectric is described. Processing problems are reviewed and discussed. This technology is to be used for the scale down of the Irst CCD7CMOS processFile in questo prodotto:
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