This work presents fabrication and evaluation of novel POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) devices based tactile sensing chip. In the newer version presented here, the tactile sensing chip has been fabricated using CMOS (Complementary Metal Oxide Semiconductor) technology. The chip consists of 4 x 4 POSFET touch sensing devices (or taxels) and both, the individual taxels and the array are designed to match spatio-temporal performance of the human fingertips. To detect contact events, the taxels utilize the contact forces induced change in the polarization level of piezoelectric polymer (and hence change in the induced channel current of MOS). The POSFET device on the chip have linear response in the tested dynamic contact forces range of 0.01–3 N and the sensitivity (without amplification) is 102.4 mV/N.
POSFET Tactile Sensing Arrays using CMOS Technology
Dahiya, Ravinder Singh;Adami, Andrea;Collini, Cristian;Lorenzelli, Leandro
2012-01-01
Abstract
This work presents fabrication and evaluation of novel POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) devices based tactile sensing chip. In the newer version presented here, the tactile sensing chip has been fabricated using CMOS (Complementary Metal Oxide Semiconductor) technology. The chip consists of 4 x 4 POSFET touch sensing devices (or taxels) and both, the individual taxels and the array are designed to match spatio-temporal performance of the human fingertips. To detect contact events, the taxels utilize the contact forces induced change in the polarization level of piezoelectric polymer (and hence change in the induced channel current of MOS). The POSFET device on the chip have linear response in the tested dynamic contact forces range of 0.01–3 N and the sensitivity (without amplification) is 102.4 mV/N.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
