This paper presents the electro-optical characteristics of a CMOS-Compatible PNP bipolar phototransistor fabricated using the VLSI fabrication process developed at IRST. The study has been performed by using the three-dimensional version of the device simulator HFIELDS. A good agreement has been found between the simulated characteristics and the results of the measurements.
3D Modeling of a Bipolar Smart Optical Sensor Fabricated in CMOS Technology
Zorzi, Nicola;
1994-01-01
Abstract
This paper presents the electro-optical characteristics of a CMOS-Compatible PNP bipolar phototransistor fabricated using the VLSI fabrication process developed at IRST. The study has been performed by using the three-dimensional version of the device simulator HFIELDS. A good agreement has been found between the simulated characteristics and the results of the measurements.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
