The development of an innovative CCD/CMOS VLSI technology specially designed to produce application specific smart optical sensors, is described. Process architecture and main technological parameters are outlined and, among the vacuum - thin film related problems specifically studied for this development, the gate oxide thinning phenomenon is presented and discussed
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Titolo: | Thin film technology in the development of IRST-CCD/CMOS VLSI fabrication process |
Autori: | |
Data di pubblicazione: | 1993 |
Abstract: | The development of an innovative CCD/CMOS VLSI technology specially designed to produce application specific smart optical sensors, is described. Process architecture and main technological parameters are outlined and, among the vacuum - thin film related problems specifically studied for this development, the gate oxide thinning phenomenon is presented and discussed |
Handle: | http://hdl.handle.net/11582/1035 |
Appare nelle tipologie: | 4.1 Contributo in Atti di convegno |
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