The development of an innovative CCD/CMOS VLSI technology specially designed to produce application specific smart optical sensors, is described. Process architecture and main technological parameters are outlined and, among the vacuum - thin film related problems specifically studied for this development, the gate oxide thinning phenomenon is presented and discussed

Thin film technology in the development of IRST-CCD/CMOS VLSI fabrication process

Bellutti, Pierluigi;Boscardin, Maurizio;Giacomozzi, Flavio;Pedrotti, Severino;Zen, Mario;Soncini, Giovanni
1993

Abstract

The development of an innovative CCD/CMOS VLSI technology specially designed to produce application specific smart optical sensors, is described. Process architecture and main technological parameters are outlined and, among the vacuum - thin film related problems specifically studied for this development, the gate oxide thinning phenomenon is presented and discussed
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/1035
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