A dry LOCal Oxidation of Silicon (LOCOS) has been studied from a morphological point of view by using SEM. With respect to the classical wet LOCOS, the results show that an interesting bird`s beak reduction is obtained. Dry oxidation is then discussed in terms of its possible use in the current VLSI/ULSI technology.

Bird`s Beak Reduction by Dry LOCOS Technique

Bellutti, Pierluigi;Boscardin, Maurizio;Lui, Alberto;Soncini, Giovanni;Zen, Mario;Zorzi, Nicola
1994

Abstract

A dry LOCal Oxidation of Silicon (LOCOS) has been studied from a morphological point of view by using SEM. With respect to the classical wet LOCOS, the results show that an interesting bird`s beak reduction is obtained. Dry oxidation is then discussed in terms of its possible use in the current VLSI/ULSI technology.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11582/1026
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