A novel termination structure for silicon microstrip detectors is proposed, featuring all p-type multiguard and scribe-line implants, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved both prior and after 1x1012 cm-2 neutron irradiation.
A Novel Silicon Microstrip Termination Structure With All P-Type Multiguard and Scribe-Line Implants
Dalla Betta, Gian Franco;Boscardin, Maurizio;Gregori, Paolo;Rachevskaia, Irina;Zorzi, Nicola
2002-01-01
Abstract
A novel termination structure for silicon microstrip detectors is proposed, featuring all p-type multiguard and scribe-line implants, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved both prior and after 1x1012 cm-2 neutron irradiation.File in questo prodotto:
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