The electro-optical characteristics of PIN photodiodes fabricated on high-resistivity silicon substrates locally thinned by bulk micromachining techniques are discussed. Experimental results and numerical simulations demonstrate that devices fabricated by the proposed approach have leakage current, quantum efficiency and speed performance comparable to the best commercially available Si PIN photodiodes, with the additional advantage of possible back-side illumination, making them suitable for the implementation of two-dimensional arrays having a read-out electronic chip connected to the front-side.

High-performance PIN photodiodes on TMAH thinned silicon wafers

Dalla Betta, Gian Franco;Ronchin, Sabina;Zorzi, Nicola
2008-01-01

Abstract

The electro-optical characteristics of PIN photodiodes fabricated on high-resistivity silicon substrates locally thinned by bulk micromachining techniques are discussed. Experimental results and numerical simulations demonstrate that devices fabricated by the proposed approach have leakage current, quantum efficiency and speed performance comparable to the best commercially available Si PIN photodiodes, with the additional advantage of possible back-side illumination, making them suitable for the implementation of two-dimensional arrays having a read-out electronic chip connected to the front-side.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/4361
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
social impact