A single photon avalanche diode detector for the analysis of fluorescence phenomena is presented. The 14-pixels array, fabricated in a conventional high voltage 0.35-μm CMOS technology, allows measuring photon densities as low as 108 photons/cm2s. Each 180x150-μm2 pixel integrates a single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter. On chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. Time-resolved measurements has been demonstrated by detecting a 10ns, 10pW (peak-power on the pixel) light pulse with a typical resolution of 80ps.
CMOS single-photon avalanche diode array for time-resolved fluorescence detection
Mosconi, Daniel;Stoppa, David;Pancheri, Lucio;Gonzo, Lorenzo;Simoni, Andrea
2006-01-01
Abstract
A single photon avalanche diode detector for the analysis of fluorescence phenomena is presented. The 14-pixels array, fabricated in a conventional high voltage 0.35-μm CMOS technology, allows measuring photon densities as low as 108 photons/cm2s. Each 180x150-μm2 pixel integrates a single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter. On chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. Time-resolved measurements has been demonstrated by detecting a 10ns, 10pW (peak-power on the pixel) light pulse with a typical resolution of 80ps.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
