The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26MeV protons. After a 1MeV neutron equivalent fluence of 1x10E15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.
Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors
Boscardin, Maurizio;Piemonte, Claudio;Zorzi, Nicola;
2007-01-01
Abstract
The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26MeV protons. After a 1MeV neutron equivalent fluence of 1x10E15 cm-2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements.File in questo prodotto:
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