This work reports on the analysis of the experimental data aimed at the developing of a CCD/CMOS process starting from a CCD one. The obtained results allow the selection of an optimized silicon substrate in terms of interstitial oxygen concentration [Oi] and gives additional information on the role of [Oi] on device electrical performances and on processing induced defects.
On the choice of the optimum silicon substrate for CCD/CMOS technology
Bellutti, Pierluigi;Boscardin, Maurizio;Soncini, Giovanni;Zen, Mario;Zorzi, Nicola
1995-01-01
Abstract
This work reports on the analysis of the experimental data aimed at the developing of a CCD/CMOS process starting from a CCD one. The obtained results allow the selection of an optimized silicon substrate in terms of interstitial oxygen concentration [Oi] and gives additional information on the role of [Oi] on device electrical performances and on processing induced defects.File in questo prodotto:
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