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Al-Sn thin film deposited by pulsed laser ablation
2002-01-01 A., Perrone; A., Zocco; H., de Rosa; R., Zimmermann; Bersani, Massimo
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing
2006-01-01 Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D`acapito; R., Doherty; M., Foad
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization
2007-01-01 Barozzi, Mario; Iacob, Erica; Vanzetti, Lia Emanuela; Bersani, Massimo; Anderle, Mariano; Pucker, Georg; C., Kompocholis
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack
2004-01-01 Barozzi, Mario; Giubertoni, Damiano; Anderle, Mariano; Bersani, Massimo
Arsenic uphill diffusion during shallow junction formation
2006-01-01 M., Ferri; S., Solmi; A., Parisini; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
2007-01-01 Justin, Hamilton; K. J., Kirkby; Nick, Cowern; Eric, Collart; Bersani, Massimo; Giubertoni, Damiano; Gennaro, Salvatore; A., Parisini
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage
2006-01-01 Bersani, Massimo; Giubertoni, Damiano; Iacob, Erica; Barozzi, Mario; S., Pederzoli; Vanzetti, Lia Emanuela; M., Anderle
Boron-interstitial silicon cluster and their effects on transient enhanced diffusion of boron in silicon
2000-01-01 S., Solmi; Bersani, Massimo; M., Sbetti; J., Lundsgaard Hansen; A., Nylandsted larsen
Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in silicon
2000-01-01 Solmi, S; Bersani, Massimo; Sbetti, M; Lundsgaard Hansen, J; Nylandsted Larsen, A
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon
2012-01-01 Demenev, Evgeny; Giubertoni, Damiano; J., van den Berg; M., Reading; Bersani, Massimo
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Al-Sn thin film deposited by pulsed laser ablation | 1-gen-2002 | A., Perrone; A., Zocco; H., de Rosa; R., Zimmermann; Bersani, Massimo | |
An EXAFS Investigation of Arsenic shallow implant activation in silicon after laser sub-melt annealing | 1-gen-2006 | Giubertoni, Damiano; Pepponi, Giancarlo; Bersani, Massimo; Gennaro, Salvatore; F., D`acapito; R., Doherty; M., Foad | |
Analytical Methodology Development for Silicon-rich-oxide Chemical and Physical Characterization | 1-gen-2007 | Barozzi, Mario; Iacob, Erica; Vanzetti, Lia Emanuela; Bersani, Massimo; Anderle, Mariano; Pucker, Georg; C., Kompocholis | |
Arsenic shallow depth profiling: accurate quantification in SiO2/Si stack | 1-gen-2004 | Barozzi, Mario; Giubertoni, Damiano; Anderle, Mariano; Bersani, Massimo | |
Arsenic uphill diffusion during shallow junction formation | 1-gen-2006 | M., Ferri; S., Solmi; A., Parisini; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario | |
Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink | 1-gen-2007 | Justin, Hamilton; K. J., Kirkby; Nick, Cowern; Eric, Collart; Bersani, Massimo; Giubertoni, Damiano; Gennaro, Salvatore; A., Parisini | |
Boron Ultra Low Energy SIMS Depth Profiling Improved by Rotating Stage | 1-gen-2006 | Bersani, Massimo; Giubertoni, Damiano; Iacob, Erica; Barozzi, Mario; S., Pederzoli; Vanzetti, Lia Emanuela; M., Anderle | |
Boron-interstitial silicon cluster and their effects on transient enhanced diffusion of boron in silicon | 1-gen-2000 | S., Solmi; Bersani, Massimo; M., Sbetti; J., Lundsgaard Hansen; A., Nylandsted larsen | |
Boron-interstitial silicon clusters and their effects on transient enhanced diffusion of boron in silicon | 1-gen-2000 | Solmi, S; Bersani, Massimo; Sbetti, M; Lundsgaard Hansen, J; Nylandsted Larsen, A | |
Calibration correction of ultra low energy SIMS profiles based on MEIS analyses for arsenic shallow implants in silicon | 1-gen-2012 | Demenev, Evgeny; Giubertoni, Damiano; J., van den Berg; M., Reading; Bersani, Massimo |
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Opzioni
Scopri
Tipologia
- 1 Contributo su Rivista 113
- 1 Contributo su Rivista::1.1 Arti... 113
Data di pubblicazione
- 2020 - 2022 2
- 2010 - 2019 30
- 2000 - 2009 76
- 1997 - 1999 5
Editore
- Elsevier 17
- American Institute of Physics 14
- AVS 3
- Wiley 3
- EDP Sciences 1
- IOP Publishing 1
- Scientific.net 1
- Springer 1
Rivista
- APPLIED SURFACE SCIENCE 15
- JOURNAL OF APPLIED PHYSICS 11
- JOURNAL OF VACUUM SCIENCE & TECHN... 10
- APPLIED PHYSICS LETTERS 9
- SURFACE AND INTERFACE ANALYSIS 7
- NUCLEAR INSTRUMENTS & METHODS IN ... 5
- MATERIALS SCIENCE AND ENGINEERING... 4
- PHYSICA STATUS SOLIDI. C 4
- SURFACE AND INTERFACE ANALYSIS 4
- DIFFUSION AND DEFECT DATA, SOLID ... 2
Keyword
- SIMS 26
- silicon 25
- diffusion 18
- annealing 16
- ion implantation 16
- boron 10
- arsenic 9
- elemental semiconductors 9
- semiconductor doping 9
- doping profiles 8
Lingua
- eng 97
- ita 1
Accesso al fulltext
- no fulltext 106
- reserved 5
- open 1
- restricted 1