Ion implantation of (48Ti)+ ions into silicon substrates at 30 keV has been done and the resulting layers are investigated by Auger Electron Spectroscopy and Seeman-Bohlin x-ray diffraction.
Auger electron spectroscopy and x-ray diffraction studies of Ti-Si layers synthesised by ion implantation
Dapor, Maurizio;Calliari, Lucia
1990-01-01
Abstract
Ion implantation of (48Ti)+ ions into silicon substrates at 30 keV has been done and the resulting layers are investigated by Auger Electron Spectroscopy and Seeman-Bohlin x-ray diffraction.File in questo prodotto:
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