Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10(-11) W/Hz(1/2), and high-speed response.
Nanowire and graphene architectures for Room Temperature THz detection
Tredicucci, Alessandro
2012-01-01
Abstract
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel material. Room temperature operation has been achieved up to frequencies of 1.5 THz, with noise equivalent powers as low as a few 10(-11) W/Hz(1/2), and high-speed response.File in questo prodotto:
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