Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10 -10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications.
Fast, sensitive and low-noise nanowire and graphene field effect transistors for room-temperature detection of Terahertz quantum cascade laser emission
Tredicucci, Alessandro
2013-01-01
Abstract
Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10 -10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications.File in questo prodotto:
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