To compare the use of dry (DW-) with respect to wet (conventional) LOCOS, investigation on the quality of the gate oxide grown nearby birdÕs beak region has been carried out. Results show that for DW samples a much higher QBD is obtained with respect to the conventional one. Furthermore, a dedicated test has pointed out a weak QB D dependence on the interstitial oxygen concentration of the silicon wafers.
Gate Oxide Quality Improvement Nearby Bird`s Beak Region
Bellutti, Pierluigi;Collini, Amos;Ferrario, Lorenza;Zorzi, Nicola;Zen, Mario
1997-01-01
Abstract
To compare the use of dry (DW-) with respect to wet (conventional) LOCOS, investigation on the quality of the gate oxide grown nearby birdÕs beak region has been carried out. Results show that for DW samples a much higher QBD is obtained with respect to the conventional one. Furthermore, a dedicated test has pointed out a weak QB D dependence on the interstitial oxygen concentration of the silicon wafers.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
