A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.

V-shape through wafer via manufactured by drie variable isotropy process

Vasilache, Dan Adrian;Colpo, Sabrina;Ronchin, Sabina;Giacomozzi, Flavio;Margesin, Benno
2010-01-01

Abstract

A new process for through-wafer interconnects was studied by our group. This new process was developed to facilitate metallised through wafer via holes manufacturing. V-shape profile can contribute to an easier metallisation process and better adhesion. Manufacturing process use the possibility to change the isotropy in the Deep Reactive Ion Etching (DRIE) equipments from anisotropic to completely isotropic. Two slightly different processes were used in order optimize the technology and to see the changes introduced by isotropic/anisotropic processes sequence.
2010
9781424457830
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/23249
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