We present a theoretical approach to the study of C influence on In diffusion and activation in Si. We consider a kick-out type model for the defect driven migration of both species, while we assume that InC complexes form by the interaction between the defect-impurity pairs and the substitutional species. Moreover, we introduce a double-level activation model in order to calculate the active fraction of the diffusion profiles. In parameters are derived both from ab initio calculations and from fitting the experimental diffusion profiles. The modeling is used in order to explain experimental data relative to In implanted into Si substrates containing different C contamination background
Role of the indium-carbon interaction on In diffusion and activation in Si
2003-01-01
Abstract
We present a theoretical approach to the study of C influence on In diffusion and activation in Si. We consider a kick-out type model for the defect driven migration of both species, while we assume that InC complexes form by the interaction between the defect-impurity pairs and the substitutional species. Moreover, we introduce a double-level activation model in order to calculate the active fraction of the diffusion profiles. In parameters are derived both from ab initio calculations and from fitting the experimental diffusion profiles. The modeling is used in order to explain experimental data relative to In implanted into Si substrates containing different C contamination backgroundI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
