SiO2/Si microcavities were prepared using poly-Si layers, deposited by LPCVD technique and thermally grown SiO2 layers. A superlattice formed by 3 thin light emitting Si-layers (thickness <2nm) separated by SiO2 layers was embedded within the microcavity. Transmission Electron Microscopy, reflection and photoluminescence spectra were used to characterise the microcavities. Reflection measurements show a cavity resonance at 650 nm and at 830 nm, with a quality factor of 65. Comparison with the photoluminescence spectra of (Si/SiO2) superlattices indicates an enhancement of the luminescence intensity by a factor of 20, a narrowing of the emission line to 13 nm and a blueshift of the main spectral features

Visible luminescence from a Si superlattice embedded in high quality Si/SiO2 optical microcavities

Pucker, Georg;Mulloni, Viviana;Bellutti, Pierluigi;Lui, Alberto;
1999-01-01

Abstract

SiO2/Si microcavities were prepared using poly-Si layers, deposited by LPCVD technique and thermally grown SiO2 layers. A superlattice formed by 3 thin light emitting Si-layers (thickness <2nm) separated by SiO2 layers was embedded within the microcavity. Transmission Electron Microscopy, reflection and photoluminescence spectra were used to characterise the microcavities. Reflection measurements show a cavity resonance at 650 nm and at 830 nm, with a quality factor of 65. Comparison with the photoluminescence spectra of (Si/SiO2) superlattices indicates an enhancement of the luminescence intensity by a factor of 20, a narrowing of the emission line to 13 nm and a blueshift of the main spectral features
1999
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1921
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