We report on a study of the compositional and chemical properties of films deposited on silicon by quadrupoled Nd:YAG pulsed laser ablation of a ceramic AlN target. The ablation has been performed either in a vacuum or in the presence of a gas atmosphere. The effect of oxygen incorporation in the films on their chemical structure was investigated. The binding energy of the aluminium 2p, nitrogen 1s and oxygen 1s core electrons indicate the formation of near-stoichiometric aluminum nitride in films grown under vacuum (10-7 - 10-5 mb) while in films grown under 0.1 mbar oxygen partial pressure only aluminum oxide formation was observed
Chemical structure of films grown by AIN laser ablation: an X-ray photoelectron spectroscopy study
Bensaada Laidani, Nadhira;Vanzetti, Lia Emanuela;Anderle, Mariano;
1999-01-01
Abstract
We report on a study of the compositional and chemical properties of films deposited on silicon by quadrupoled Nd:YAG pulsed laser ablation of a ceramic AlN target. The ablation has been performed either in a vacuum or in the presence of a gas atmosphere. The effect of oxygen incorporation in the films on their chemical structure was investigated. The binding energy of the aluminium 2p, nitrogen 1s and oxygen 1s core electrons indicate the formation of near-stoichiometric aluminum nitride in films grown under vacuum (10-7 - 10-5 mb) while in films grown under 0.1 mbar oxygen partial pressure only aluminum oxide formation was observedFile in questo prodotto:
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