A novel termination structure for silicon microstrip detectors is proposed, featuring all-p-type multi-guards and scribe-line implant, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables high-voltage capability to be achieved.
An `all-p-type` termination structure for silicon microstrip detectors
Dalla Betta, Gian Franco;Boscardin, Maurizio;Gregori, Paolo;Rachevskaia, Irina;Zorzi, Nicola
2001-01-01
Abstract
A novel termination structure for silicon microstrip detectors is proposed, featuring all-p-type multi-guards and scribe-line implant, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables high-voltage capability to be achieved.File in questo prodotto:
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