We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high energy physics and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures.
Design and characterization of integrated front-end transistors in a micro-strip detector technology
Boscardin, Maurizio;Dalla Betta, Gian Franco;Gregori, Paolo;Ratti, Lodovico;Zorzi, Nicola
2002-01-01
Abstract
We present the developments in a research program aimed at the realization of silicon micro-strip detectors with front-end electronics integrated in a high resistivity substrate to be used in high energy physics and medical/industrial imaging applications. We report on the fabrication process developed at IRST (Trento, Italy), the characterization of the basic wafer parameters and measurements of the relevant working characteristics of the integrated transistors and related test structures.File in questo prodotto:
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