The recent progresses accomplished in our research group are here presented: 1) Porous silicon micro-cavities (PSMSs) were formed on p type doped (6 to 9 omega cm) substrates with very narrow bandwidth (6nm) and a good ratio of the peak to background emission, reaching at the same time a high emission quantum efficiency. 2) Light emitting diodes based on n-type doped silicon/porous silicon (PS) heterojunctions. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. Anodic oxidation experiments show further improvements in the LED efficiency. 3) SiO2/Si/SiO2-quantum wells with room temperature efficient light emission in the visible range. We report here on the preparation and photoluminescence properties of thin SiO2/Si layers obtained by low pressure chemical vapor phase deposition and thermal oxidation processes. The growth technique is fully compatible with standard VLSI CMOS technology
Porous Silicon Optical Devices and Si/SiO2 Quantum Wells: Recent Results
Mulloni, Viviana;Pucker, Georg;Bellutti, Pierluigi
2000-01-01
Abstract
The recent progresses accomplished in our research group are here presented: 1) Porous silicon micro-cavities (PSMSs) were formed on p type doped (6 to 9 omega cm) substrates with very narrow bandwidth (6nm) and a good ratio of the peak to background emission, reaching at the same time a high emission quantum efficiency. 2) Light emitting diodes based on n-type doped silicon/porous silicon (PS) heterojunctions. The improvement of the proposed LED structure with respect to usual metal/PS LED is demonstrated. Anodic oxidation experiments show further improvements in the LED efficiency. 3) SiO2/Si/SiO2-quantum wells with room temperature efficient light emission in the visible range. We report here on the preparation and photoluminescence properties of thin SiO2/Si layers obtained by low pressure chemical vapor phase deposition and thermal oxidation processes. The growth technique is fully compatible with standard VLSI CMOS technologyI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
