In this paper the possibility to passivate the aluminum metalization in properly saturated TMAH solution is demostrated by doping the solution with appropiate amounts of silicic acid. This increases the range of application of this etchants simplifing both the post processing and the etch set-up configuration. We investigate the effect of these additives on the etch rate and the quality of (100) and (111) silicon sufaces obtained for different TMAH concentrations. We therefore also investigate the effect of ammonium persulfate (NH4)2S2O8 on the etch rate under different addition conditions for a 6.25wt.% TMAH doped by silicic acid in order to keep aluminum passivated.
Characterization of Silicon Anisotropic TMAH Etch for Bulk Micromachining
Guarnieri, Vittorio;Giacomozzi, Flavio;Margesin, Benno;Zen, Mario
1998-01-01
Abstract
In this paper the possibility to passivate the aluminum metalization in properly saturated TMAH solution is demostrated by doping the solution with appropiate amounts of silicic acid. This increases the range of application of this etchants simplifing both the post processing and the etch set-up configuration. We investigate the effect of these additives on the etch rate and the quality of (100) and (111) silicon sufaces obtained for different TMAH concentrations. We therefore also investigate the effect of ammonium persulfate (NH4)2S2O8 on the etch rate under different addition conditions for a 6.25wt.% TMAH doped by silicic acid in order to keep aluminum passivated.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
