The electrical reliability of integrated capacitors to be used for AC-coupled microstrip detectors has been investigated by characterizing a specially designed test chip. Capacitors employing different stacked dielectrics, including double-layer oxide, oxide-nitride, and oxide-nitride-oxide insulators, have been compared in terms of intrinsic breakdown field and extrinsic failures distribution. Results obtained from two fabrication runs are presented and discussed. The impact of the different technological options adopted on diode leakage current and bulk- and surface-generation parameters is also reported

A Comparative Evaluation of Integrated Capacitors for AC-Coupled Microstrip Detectors

Dalla Betta, Gian Franco;Boscardin, Maurizio;
1998-01-01

Abstract

The electrical reliability of integrated capacitors to be used for AC-coupled microstrip detectors has been investigated by characterizing a specially designed test chip. Capacitors employing different stacked dielectrics, including double-layer oxide, oxide-nitride, and oxide-nitride-oxide insulators, have been compared in terms of intrinsic breakdown field and extrinsic failures distribution. Results obtained from two fabrication runs are presented and discussed. The impact of the different technological options adopted on diode leakage current and bulk- and surface-generation parameters is also reported
1998
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11582/1492
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