Numerical analysis of ISFET and LAPS devices

In this summary, a numerical simulation technique suitable for device-level analysis of ion-sensitive devices is presented. The charge layers which develop at the electrolyte-insulator interface of an EIS system are taken into account in the formulation of charge transport equations, thus providing a self-consistent picture of charge and field distribution within the device. AC-modulated optical generation rate has also been taken into account, to make the simulation of LAPS device feasible. Comparisons with actual device responses (either ISFET and LAPS) provide validation of the TCAD tool