A simple modification of the standard CMOS process flow has been recently proposed whose goal is the process simplification: the wells formation and the local oxidation (typically separated process phases), in this proposed modified process (DW-LOCOS) are simultaneously obtained by performing the well drive-in in dry O2 ambient. Aim of this work is to outline the possible advantages and drawbacks of the DW-LOCOS implementation in a standard CMOS process.
Proposal for a Simplified CMOS VLSI Fabrication Sequence
Bellutti, Pierluigi;Boscardin, Maurizio;Giacomozzi, Flavio;Soncini, Giovanni;Zen, Mario;Zorzi, Nicola
1995-01-01
Abstract
A simple modification of the standard CMOS process flow has been recently proposed whose goal is the process simplification: the wells formation and the local oxidation (typically separated process phases), in this proposed modified process (DW-LOCOS) are simultaneously obtained by performing the well drive-in in dry O2 ambient. Aim of this work is to outline the possible advantages and drawbacks of the DW-LOCOS implementation in a standard CMOS process.File in questo prodotto:
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