Cu2O/Fe/Si n-type magnetic metal base transistor

Metal Base Transistors (MBTs), three terminal semiconductor-metal-semiconductor devices, investigated since the beginning of the 1960 decade1, were initially envisaged for high frequency applications. More recently, magnetic layers and spin valve structures were used as base, and a collector current dependent on the applied magnetic field was observed (magnetocurrent)2,3. Magnetic metal base transistors, also known as spin transistors, have potential application as spintronic devices. Nowadays the techniques utilized in the fabrication of these kind of MBTs , such as ultra vacuum bonding, are not applicable in the semiconductor technology production or yield poor output signal4. The aim of this work was to fabricate a MBT with n-type Cl doped cuprous oxide as emitter, growth by electrodeposition5, use a single Fe layer or a Fe/Cu/Fe spin valve as metallic base, and n-type Si as collector. In this work it will be shown the microelectronics fabrication process and the electrical characterization of the Cu2O/Fe/Si device.