Sfoglia per Rivista JOURNAL OF APPLIED PHYSICS
Active feedback cooling of a SiN membrane resonator by electrostatic actuation
2021-01-01 Borrielli, A.; Bonaldi, M.; Serra, E.; Sarro, P. M.; Morana, B.
An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications
2008-01-01 G., Bartolucci; R., Marcelli; Simone, Catoni; Margesin, Benno; Giacomozzi, Flavio; Mulloni, Viviana; Paola, Farinelli
Analytical transport cross section of medium energy positrons elastically scattered by complex atoms (Z=1-92)
1995-01-01 Dapor, Maurizio
Arsenic uphill diffusion during shallow junction formation
2006-01-01 M., Ferri; S., Solmi; A., Parisini; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario
Backscattering of Low Energy Electrons from Carbon Films Deposited on Aluminum: a Monte Carlo Simulation
2004-01-01 Dapor, Maurizio
Boron Ion Implantation through Mo and Mo Silicide Layers for Shallow Junction Formation
1991-01-01 R., Angelucci; Sandro, Solmi; A., Armigliato; S., Guerri; M., Merli; A., Poggi; Canteri, Roberto
Chemical and compositional changes induced by N+ implantation in amorphous SiC films
1993-01-01 Bensaada Laidani, Nadhira; M., Bonelli; R., Bertoncello; A., Glisenti; Calliari, Lucia; R., Capelletti; P., Ossi; A., Miotello; M., Elena; L., Guzman
Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study
2014-01-01 Ahamad Mohiddon, M. d.; K., Lakshun Naidu; M., Ghanashyam Krishna; G., Dalba; S. I., Ahmed; Rocca, Francesco
Codiffusion of arsenic and boron implanted in silicon
1995-01-01 Sandro, Solmi; S., Valmorri; Canteri, Roberto
Codiffusion of arsenic and boron implanted in silicon
1995-01-01 S., Solmi; S., Valmorri; Canteri, Roberto
Codiffusion of arsenic and phosphorus implanted in silicon
1993-01-01 Solmi, S.; Maccagnani, P.; Canteri, R.
Codiffusion of Arsenic and Phosphorus Implanted Silicon
1993-01-01 Sandro, Solmi; P., Maccagnani; Canteri, Roberto
Contacts shielding in nanowire field effect transistors
2012-01-01 Alessandro, Pitanti; Stefano, Roddaro; Miriam S., Vitiello; Tredicucci, Alessandro
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon
2008-01-01 Giubertoni, Damiano; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo; Mehmet, Sahiner; Stephen, Kelty; Roisin, Doherty; Majeed, Foad; Max, Kah; K. J., Kirkby; Joseph, Woicik; P., Pianetta
Degradation of REBCO coated conductors due to a combination of epoxy impregnation, thermal cycles, and quench: Characteristics and a method of alleviation
2020-01-01 Yin, Shijian; Duranti, Mattia; Swenson, Charles A.; Li, Pei; Ye, Liyang; Zhang, Xingguo; Shen, Tengming
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation
2007-01-01 Selcuk, Yerci; I., Yildiz; M., Kulacki; U., Serincan; Barozzi, Mario; Bersani, Massimo
Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches
2009-01-01 Romolo, Marcelli; George, Papaioannu; Simone, Catoni; Giorgio De, Angelis; Andrea, Lucibello; Emanuela, Proietti; Margesin, Benno; Giacomozzi, Flavio; Francois, Deborgies
Diffusion and electrical activation of indium in silicon
2003-01-01 Silvia, Scalese; M., Italia; Antonio La, Magna; G., Mannino; V., Privitera; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario; S., Solmi; P., Pichler
Diffusion and electrical activation of indium in silicon
2003-01-01 Silvia, Scalese; M., Italia; Antonio La, Magna; G., Mannino; V., Privitera; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario; Sandro, Solmi; P., Pichler
Diffusion of Boron in Silicon During Post-Implantation Annealing
1991-01-01 Sandro, Solmi; F., Baruffaldi; Canteri, Roberto
Titolo | Data di pubblicazione | Autore(i) | File |
---|---|---|---|
Active feedback cooling of a SiN membrane resonator by electrostatic actuation | 1-gen-2021 | Borrielli, A.; Bonaldi, M.; Serra, E.; Sarro, P. M.; Morana, B. | |
An equivalent-circuit model for shunt-connected coplanar microelectromechanical system switches for high frequency applications | 1-gen-2008 | G., Bartolucci; R., Marcelli; Simone, Catoni; Margesin, Benno; Giacomozzi, Flavio; Mulloni, Viviana; Paola, Farinelli | |
Analytical transport cross section of medium energy positrons elastically scattered by complex atoms (Z=1-92) | 1-gen-1995 | Dapor, Maurizio | |
Arsenic uphill diffusion during shallow junction formation | 1-gen-2006 | M., Ferri; S., Solmi; A., Parisini; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario | |
Backscattering of Low Energy Electrons from Carbon Films Deposited on Aluminum: a Monte Carlo Simulation | 1-gen-2004 | Dapor, Maurizio | |
Boron Ion Implantation through Mo and Mo Silicide Layers for Shallow Junction Formation | 1-gen-1991 | R., Angelucci; Sandro, Solmi; A., Armigliato; S., Guerri; M., Merli; A., Poggi; Canteri, Roberto | |
Chemical and compositional changes induced by N+ implantation in amorphous SiC films | 1-gen-1993 | Bensaada Laidani, Nadhira; M., Bonelli; R., Bertoncello; A., Glisenti; Calliari, Lucia; R., Capelletti; P., Ossi; A., Miotello; M., Elena; L., Guzman | |
Chromium oxide as a metal diffusion barrier layer: An x-ray absorption fine structure spectroscopy study | 1-gen-2014 | Ahamad Mohiddon, M. d.; K., Lakshun Naidu; M., Ghanashyam Krishna; G., Dalba; S. I., Ahmed; Rocca, Francesco | |
Codiffusion of arsenic and boron implanted in silicon | 1-gen-1995 | Sandro, Solmi; S., Valmorri; Canteri, Roberto | |
Codiffusion of arsenic and boron implanted in silicon | 1-gen-1995 | S., Solmi; S., Valmorri; Canteri, Roberto | |
Codiffusion of arsenic and phosphorus implanted in silicon | 1-gen-1993 | Solmi, S.; Maccagnani, P.; Canteri, R. | |
Codiffusion of Arsenic and Phosphorus Implanted Silicon | 1-gen-1993 | Sandro, Solmi; P., Maccagnani; Canteri, Roberto | |
Contacts shielding in nanowire field effect transistors | 1-gen-2012 | Alessandro, Pitanti; Stefano, Roddaro; Miriam S., Vitiello; Tredicucci, Alessandro | |
Correlation of local structure and electrical activation in arsenic ultrashallow junctions in silicon | 1-gen-2008 | Giubertoni, Damiano; Pepponi, Giancarlo; Gennaro, Salvatore; Bersani, Massimo; Mehmet, Sahiner; Stephen, Kelty; Roisin, Doherty; Majeed, Foad; Max, Kah; K. J., Kirkby; Joseph, Woicik; P., Pianetta | |
Degradation of REBCO coated conductors due to a combination of epoxy impregnation, thermal cycles, and quench: Characteristics and a method of alleviation | 1-gen-2020 | Yin, Shijian; Duranti, Mattia; Swenson, Charles A.; Li, Pei; Ye, Liyang; Zhang, Xingguo; Shen, Tengming | |
Depth profile investigations of silicon nanocrystals formed in sapphire by ion implantation | 1-gen-2007 | Selcuk, Yerci; I., Yildiz; M., Kulacki; U., Serincan; Barozzi, Mario; Bersani, Massimo | |
Dielectric charging in microwave microelectromechanical Ohmic series and capacitive shunt switches | 1-gen-2009 | Romolo, Marcelli; George, Papaioannu; Simone, Catoni; Giorgio De, Angelis; Andrea, Lucibello; Emanuela, Proietti; Margesin, Benno; Giacomozzi, Flavio; Francois, Deborgies | |
Diffusion and electrical activation of indium in silicon | 1-gen-2003 | Silvia, Scalese; M., Italia; Antonio La, Magna; G., Mannino; V., Privitera; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario; S., Solmi; P., Pichler | |
Diffusion and electrical activation of indium in silicon | 1-gen-2003 | Silvia, Scalese; M., Italia; Antonio La, Magna; G., Mannino; V., Privitera; Bersani, Massimo; Giubertoni, Damiano; Barozzi, Mario; Sandro, Solmi; P., Pichler | |
Diffusion of Boron in Silicon During Post-Implantation Annealing | 1-gen-1991 | Sandro, Solmi; F., Baruffaldi; Canteri, Roberto |
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